Osan, South Korea

Jun Hyeok Lee

This inventor holds 1 USPTO granted patent. Top assignee: Charm Engineering Co., Ltd.. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun Hyeok Lee. Retrieved from https://idiyas.com/inventor/jun-hyeok-lee-ta55ogrj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2013

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Jun Hyeok Lee: Innovator in Plasma Processing Technology

Introduction

Jun Hyeok Lee is a notable inventor based in Osan-si, South Korea. He has made significant contributions to the field of plasma processing technology. His innovative work has led to the development of a unique plasma processing apparatus and method.

Latest Patents

Jun Hyeok Lee holds 1 patent for his invention titled "Plasma processing apparatus and method for plasma processing." This patent describes a plasma processing apparatus that includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The design allows for effective substrate level etching and backside etching processes, enhancing the efficiency of plasma processing.

Career Highlights

Lee is currently employed at Charm Engineering Co., Ltd., where he continues to advance his research and development efforts in plasma processing technologies. His work is instrumental in improving the capabilities of plasma processing equipment.

Collaborations

He collaborates with talented coworkers, including Hyoung Won Kim and Young Ho Seo, who contribute to the innovative projects at Charm Engineering Co., Ltd.

Conclusion

Jun Hyeok Lee's contributions to plasma processing technology exemplify the impact of innovation in the field. His patent and ongoing work at Charm Engineering Co., Ltd. highlight his role as a key inventor in advancing this technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…