Jui-Tse Hsiao

Title: Innovations by Jui-Tse Hsiao in Three-Dimensional Source Contact Structures

Introduction

Jui-Tse Hsiao is an accomplished inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of three-dimensional source contact structures. His innovative approach has the potential to enhance the performance of power devices.

Latest Patents

Jui-Tse Hsiao holds a patent for a "Process method for fabricating a three-dimensional source contact structure." This method is designed to create a step-like three-dimensional source contact structure in a MOSFET of a power device. The process involves a combination of lithography and shallow trench techniques to form a metal contact window. Additionally, it incorporates lateral etching or spacers to improve horizontal surface contact during the deposition of source contact metal. The invention effectively reduces cell pitch and can be widely applied to various power devices with MOSFET structures.

Career Highlights

Jui-Tse Hsiao is affiliated with National Yang Ming Chiao Tung University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its practical applications in enhancing device performance.

Collaborations

Jui-Tse Hsiao collaborates with notable colleagues, including Bing-Yue Tsui and Jui-Cheng Wang. Their combined expertise contributes to the innovative research environment at their institution.

Conclusion

Jui-Tse Hsiao's contributions to the field of semiconductor technology, particularly through his patented process for three-dimensional source contact structures, highlight his role as a leading inventor. His work not only advances academic research but also has significant implications for the future of power devices.