Company Filing History:
Years Active: 2012
Title: Judit Lisoni Reyes: Innovator in Resistive Switching Memory Technology
Introduction
Judit Lisoni Reyes is a prominent inventor based in Oud-Heverlee, Belgium. She has made significant contributions to the field of memory technology, particularly in the development of resistive switching memory cells. Her innovative work has led to the filing of a patent that showcases her expertise and creativity in this area.
Latest Patents
Judit holds a patent titled "Method for manufacturing a resistive switching memory cell comprising a nickel oxide layer operable at low-power and memory cells obtained thereof." This patent describes a resistive switching non-volatile memory element that includes a metal-oxide layer sandwiched between a top electrode and a bottom electrode. The resistive switching metal oxide layer features a substantial isotropic non-stoichiometric metal-to-oxygen ratio. Specifically, the memory element may utilize a nickel oxide resistive switching layer positioned between nickel electrodes, with an oxygen-to-nickel ratio ranging from 0 to 0.85. This innovation is crucial for enhancing the efficiency and performance of memory devices.
Career Highlights
Judit Lisoni Reyes has established herself as a key figure in the field of memory technology. Her work at Imec, a leading research and innovation hub, has allowed her to explore and develop cutting-edge technologies. With her patent, she has demonstrated her ability to contribute to advancements in non-volatile memory solutions.
Collaborations
Judit collaborates with talented professionals in her field, including Ludovic Goux and Dirk Wouters. These partnerships enhance her research and development efforts, fostering innovation and creativity in her projects.
Conclusion
Judit Lisoni Reyes is a remarkable inventor whose work in resistive switching memory technology is paving the way for future advancements in the field. Her contributions, particularly through her patent, highlight her expertise and commitment to innovation.