Yorktown Heights, NY, United States of America

Joseph M Karasinski


Average Co-Inventor Count = 5.1

ph-index = 2

Forward Citations = 112(Granted Patents)


Company Filing History:


Years Active: 1998-2001

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3 patents (USPTO):

Title: An Overview of Inventor Joseph M. Karasinski

Introduction: Joseph M. Karasinski, a prolific inventor based in Yorktown Heights, NY, has made significant contributions to the field of ferromagnetic materials. With a total of three patents to his name, his work primarily focuses on advancements in magnetic memory and storage technology.

Latest Patents: Joseph's latest inventions include innovative methods for the selective growth of ferromagnetic films. One of his patents describes a method of forming a device that involves the selective area deposition of a ferromagnetic material on a substrate. The unique aspect of this process is that the substrate surface is partially covered with material that possesses a crystal structure having at least one symmetry relation with the crystal structure of the ferromagnetic material. His work also extends to magnetic memory and storage-based devices, emphasizing the same selective area deposition technique.

Career Highlights: Joseph M. Karasinski is currently employed at the International Business Machines Corporation (IBM), where he collaborates on cutting-edge technologies that push the boundaries of what is possible in the field of magnetics and storage solutions.

Collaborations: Throughout his career, Joseph has teamed up with renowned professionals like Supratik Guha and Nestor A. Bojarczuk, Jr. These collaborations have undoubtedly contributed to the innovative nature of his work and the successful development of his technologies.

Conclusion: Joseph M. Karasinski exemplifies the spirit of innovation in the technology sector. His contributions to the selective growth of ferromagnetic films and advancements in magnetic memory highlight his role as a key inventor at IBM. As technology continues to evolve, his inventions will likely play a crucial role in shaping the future of storage-based devices.

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