Pleasantville, NY, United States of America

Joseph M Jasinski


Average Co-Inventor Count = 2.4

ph-index = 2

Forward Citations = 153(Granted Patents)


Company Filing History:


Years Active: 1987-1990

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2 patents (USPTO):Explore Patents

Title: Joseph M Jasinski: Innovator in Chemical Vapor Deposition

Introduction

Joseph M Jasinski is a notable inventor based in Pleasantville, NY (US). He has made significant contributions to the field of chemical vapor deposition, holding 2 patents that showcase his innovative approaches to material deposition processes. His work is particularly relevant in the semiconductor and materials science industries.

Latest Patents

Jasinski's latest patents include a method of chemical vapor deposition of copper, silver, and gold. This patent describes improved processes for the deposition of Cu and group IB metals such as Ag and Au. The methods involve thermal CVD, photothermal depositions, and photochemical deposition. The gaseous precursor used for successful deposition includes a cyclopentadienyl ring, a two-electron donor ligand, and the group IB metal in a +1 oxidation state. Additionally, derivatives of the cyclopentadienyl ring can be utilized, with substituents selected from alkyl groups, halide groups, and pseudohalide groups. The two-electron donor ligand can be chosen from trivalent phosphines, amines, and arsines. A representative precursor for the deposition of Cu is triethylphosphine cyclopentadienyl copper (I).

Another significant patent by Jasinski is for the low-pressure chemical vapor deposition of tungsten silicide. This process prepares tungsten silicide films using low pressure and low temperature to deposit silicon-rich tungsten silicide films. Higher order silanes, such as disilane and trisilane, serve as the silicon source, while WF.sub.6 is used as the gaseous tungsten source. The substrate temperature is maintained at less than about 370°C, with a total pressure range of 0.05-1 Torr. WF.sub.6 flow rates are generally kept below 25 sccm, while higher order silane flow rates are typically less than about 400 sccm.

Career Highlights

Joseph M Jasinski is currently associated with International Business Machines Corporation (IBM), where he continues to advance his research and development efforts in chemical vapor deposition technologies. His work has been instrumental in enhancing the efficiency and effectiveness of material deposition processes.

Collaborations

Throughout his career, Jasinski has collaborated with esteemed colleagues, including Bernard S Meyerson and Bruce A Scott. These collaborations have further enriched his research

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