Company Filing History:
Years Active: 2021
Title: Innovations of Jong-Ryul Kim in Memory Device Technology
Introduction
Jong-Ryul Kim is a notable inventor based in Dangjin-si, South Korea. He has made significant contributions to the field of memory devices, particularly through his innovative patent. His work is recognized within the technology sector, especially at Samsung Electronics Co., Ltd., where he applies his expertise.
Latest Patents
One of Jong-Ryul Kim's key patents is titled "Cross point resistive memory device with compensation for leakage current in read operation." This patent describes a memory device that includes a memory cell array with multiple memory cells arranged at the intersections of word lines and bit lines. The device features a control logic circuit designed to precharge selected word and bit lines during read operations, ensuring efficient performance and reduced leakage current.
Career Highlights
Throughout his career, Jong-Ryul Kim has focused on advancing memory technology. His work at Samsung Electronics Co., Ltd. has positioned him as a key player in the development of innovative memory solutions. His contributions have been instrumental in enhancing the efficiency and reliability of memory devices.
Collaborations
Jong-Ryul Kim has collaborated with Moo-Sung Kim, another professional in the field, to further advance their research and development efforts. Their partnership has led to significant advancements in memory technology.
Conclusion
Jong-Ryul Kim's innovative work in memory device technology exemplifies the impact of dedicated inventors in the tech industry. His patent and contributions continue to influence the development of advanced memory solutions.