Company Filing History:
Years Active: 2020-2021
Title: The Innovative Work of Jong-Hoo Jo in Nonvolatile Memory Technology
Introduction
Jong-Hoo Jo is a distinguished inventor based in Hwaseong-si, South Korea, associated with Samsung Electronics Co., Ltd. He has contributed significantly to the field of nonvolatile memory technology, holding two patents that focus on enhancing power efficiency and operational speed in memory devices.
Latest Patents
Among his notable contributions, one of Jong-Hoo Jo's latest patents includes a groundbreaking method for programming in nonvolatile memory devices. This method involves precharging the channels of multiple cell strings using ground selection transistors powered by a source line's precharge voltage. During the verification read period of an N-th program loop, a turn-on voltage is applied to a selected ground selection transistor of a chosen cell string. Remarkably, this turn-on voltage is sustained to precharge the channels for an (N+1)-th program loop, eliminating the need for recovery after the verification read period is completed. This innovation not only reduces power consumption but also significantly increases operational speed, benefiting the overall performance of nonvolatile memory devices.
Career Highlights
Jong-Hoo Jo's contributions to Samsung Electronics Co., Ltd. illustrate his dedication to advancing memory technology. His innovative approaches have been paramount in enhancing the efficiency and functionality of memory devices utilized in various electronic applications.
Collaborations
Throughout his career, Jong-Hoo Jo has collaborated with talented colleagues such as Kang-Bin Lee and Il-Han Park. This teamwork has allowed for the exchange of ideas and synergy, leading to further innovations in nonvolatile memory programming techniques.
Conclusion
Jong-Hoo Jo's pioneering inventions in nonvolatile memory technology, particularly his methods for improving power efficiency and operational speed, position him as a notable figure in the field. His work continues to influence advancements in memory device technology, showcasing the impact of innovation on everyday electronic applications.