Location History:
- Gunpo-si, KR (2019)
- Gyeonggi-do, KR (2022)
Company Filing History:
Years Active: 2019-2022
Title: Jong Hee Kim: Innovator in Touch Sensor Technology
Introduction
Jong Hee Kim is a prominent inventor based in Gunpo-si, South Korea. He has made significant contributions to the field of touch sensor technology, holding a total of 5 patents. His innovative work focuses on enhancing the functionality and stability of touch sensors, which are essential components in modern electronic devices.
Latest Patents
Among his latest patents, Jong Hee Kim has developed a touch sensor that includes a substrate and an electrode formed from a conductive stack structure. This structure consists of a first conductive oxide layer, a copper-containing metal layer, and a second conductive oxide layer, all sequentially stacked from the substrate. The inclusion of copper-metal oxide in both the first and second conductive oxide layers improves the chemical and mechanical stability of the electrode. Another notable patent is for a film touch sensor, which features a conductive pattern layer and a separation layer. This design incorporates a capping layer made of SiON, which enhances image visibility and reduces the resistance of the conductive pattern layer.
Career Highlights
Jong Hee Kim is currently employed at Dongwoo Fine-chem Co., Ltd., where he continues to push the boundaries of touch sensor technology. His work has been instrumental in developing advanced solutions that meet the growing demands of the electronics industry.
Collaborations
Throughout his career, Jong Hee Kim has collaborated with talented individuals such as Changjun Maeng and Sung Jin Noh. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Jong Hee Kim's contributions to touch sensor technology exemplify his dedication to innovation and excellence. His patents reflect a commitment to improving the functionality and stability of electronic devices, making him a key figure in the field.