Company Filing History:
Years Active: 2017
Title: Innovations of Jonathan R Skuza
Introduction
Jonathan R Skuza is an accomplished inventor based in Williamsburg, VA. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to X-ray diffraction characterization methods.
Latest Patents
Jonathan R Skuza holds a patent for "X-ray diffraction (XRD) characterization methods for sigma=3 twin defects in cubic semiconductor (100) wafers." This patent introduces a concentration measurement method and a wafer mapping method applicable to cubic tetrahedral semiconductor wafers, including GaAs (100) and Si (100) wafers. The methods utilize the cubic semiconductor's (004) pole figure to detect sigma=3/{111} twin defects. The XRD methods are versatile and can be applied to various (100) wafers of tetrahedral cubic semiconductors in both diamond and cubic zinc-blend structures, accommodating different growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth, and Metal Organic Chemical Vapor Deposition (MOCVD) growth.
Career Highlights
Jonathan R Skuza is currently associated with the United States of America as represented by the Administrator of NASA. His work focuses on advancing semiconductor technologies and improving characterization methods that are crucial for the development of high-performance electronic devices.
Collaborations
Some of his notable coworkers include Yeonjoon Park and Hyun Jung Kim, who have collaborated with him on various projects related to semiconductor research and development.
Conclusion
Jonathan R Skuza's innovative work in X-ray diffraction characterization methods has made a significant impact on the semiconductor industry. His contributions continue to enhance the understanding and application of semiconductor technologies.