Location History:
- Fridley, MN (US) (1993 - 1994)
- Bloomington, MN (US) (1994)
Company Filing History:
Years Active: 1993-1994
Title: Jon N Kuznia: Innovator in High Electron Mobility Transistors and Ultraviolet Detectors
Introduction
Jon N Kuznia is a notable inventor based in Fridley, MN (US), recognized for his contributions to semiconductor technology. He holds three patents that showcase his expertise in high electron mobility transistors and ultraviolet detectors. His work has significant implications for advancements in electronic and optoelectronic devices.
Latest Patents
Kuznia's latest patents include a method of making a high electron mobility transistor. This invention leverages the increased mobility due to a two-dimensional electron gas occurring in GaN/Al.sub.x Ga.sub.1-x N heterojunctions. These structures are deposited on basal plane sapphire using low-pressure metalorganic chemical vapor deposition. The electron mobility of the heterojunction is approximately 620 cm.sup.2 per volt second at room temperature, significantly higher than the 56 cm.sup.2 per volt second for bulk GaN of the same thickness. Additionally, he has developed a high responsivity ultraviolet gallium nitride detector. This invention features an Al.sub.x Ga.sub.1-x N ultraviolet detector with exceptional responsivity at wavelengths ranging from 200 to 365 nanometers.
Career Highlights
Kuznia is currently associated with Apa Optics, Inc., where he continues to innovate in the field of optics and electronics. His work has been instrumental in enhancing the performance of semiconductor devices, particularly in the areas of mobility and responsivity.
Collaborations
Throughout his career, Kuznia has collaborated with notable colleagues, including Donald T Olson and James M VanHove. These partnerships have contributed to the advancement of his research and the successful development of his patents.
Conclusion
Jon N Kuznia is a distinguished inventor whose work in high electron mobility transistors and ultraviolet detectors has made a significant impact on the field of semiconductor technology. His innovative contributions continue to pave the way for future advancements in electronic devices.