Jolly Gurvinder

Title: Jolly Gurvinder: Innovator in LDMOS Technology

Introduction

Jolly Gurvinder is a notable inventor based in Newport Beach, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of LDMOS (Lateral Double-Diffused Metal-Oxide-Semiconductor) devices. His innovative approach has led to advancements that enhance the performance and efficiency of these devices.

Latest Patents

Jolly Gurvinder holds a patent for a method titled "Double RESURF LDMOS with separately patterned P+ and N+ buried layers formed by shared mask." This patent describes a fabrication method that utilizes a shared mask to create separately patterned N+ buried layer (NBL) and P+ buried layer (PBL) regions. The method involves using two types of openings in the mask, allowing for precise implantation of P-type and N-type materials at different angles. This innovative technique results in improved device performance by optimizing the structure of the LDMOS.

Career Highlights

Jolly Gurvinder is currently associated with Tower Semiconductor Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced fabrication techniques that are crucial for modern electronic devices. With a focus on innovation, he has established himself as a key player in the industry.

Collaborations

Jolly has collaborated with talented individuals such as Sagy Levy and Sharon Levin, who have contributed to his projects and research endeavors. Their combined expertise has fostered a collaborative environment that encourages innovation and creativity.

Conclusion

Jolly Gurvinder's contributions to LDMOS technology exemplify the spirit of innovation in the semiconductor industry. His patented methods and collaborative efforts continue to influence the development of advanced electronic devices.