Shanghai, China

Jojo Xing


Average Co-Inventor Count = 5.8

ph-index = 1


Company Filing History:


Years Active: 2025

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2 patents (USPTO):

Title: Jojo Xing: Innovator in Non-Volatile Memory Technology

Introduction

Jojo Xing is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of non-volatile memory technology. With a total of 2 patents to his name, his work focuses on enhancing the reliability and efficiency of memory devices.

Latest Patents

Jojo Xing's latest patents include innovative solutions for addressing issues in non-volatile memory devices. One of his patents is titled "Non-volatile memory with layout adaptive problematic word line detection." This invention addresses the challenges of word line related short circuits within the blocks of the array structure of a non-volatile memory device, such as NAND memory. It presents techniques for detecting layout-related problematic word lines that can affect the performance of memory arrays.

Another significant patent is "Storage system and method for proactive die retirement by fatal wordline leakage detection." This invention provides a solution for detecting leaks on wordlines that may lead to data loss. The storage system includes a fatal wordline leak detector that determines whether to retire just the affected block or related blocks, depending on the type of leak detected.

Career Highlights

Jojo Xing is currently employed at Sandisk Technologies Inc., where he continues to develop cutting-edge memory technologies. His expertise in non-volatile memory has positioned him as a key player in the industry.

Collaborations

Throughout his career, Jojo has collaborated with talented individuals such as Xuan Tian and Liang Li. These collaborations have contributed to the advancement of memory technology and innovation.

Conclusion

Jojo Xing's contributions to non-volatile memory technology through his patents demonstrate his commitment to innovation and excellence in the field. His work continues to influence the development of reliable memory solutions.

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