Company Filing History:
Years Active: 1989-1990
Title: John Y Huang: Innovator in Memory Cell Technology
Introduction
John Y Huang is a notable inventor based in Fremont, CA (US). He has made significant contributions to the field of memory cell technology, holding a total of 3 patents. His work primarily focuses on enhancing the functionality and efficiency of EEPROM devices.
Latest Patents
One of his latest patents is for a sealed charge storage structure. This innovation involves a memory cell in an EPROM device that is completely sealed from ultraviolet light by a conductive cover. The design eliminates openings for leads to the cell's drain, source, and gate, ensuring better protection. Electrical communication with the source is achieved through direct contact with the conductive cover, while access to the drain and floating gate is facilitated by buried N+ implants or N-wells. This memory cell features a single poly floating gate, which is capacitively coupled to the floating gate via a thin oxide layer.
Another significant patent by Huang is the fabrication process for EEPROMs with high voltage transistors. This CMOS fabrication process allows for high-breakdown-voltage peripheral transistors. A single implant step early in the process forms buried implants for both the memory cell's tunnel area source and the high voltage transistor's source and drain areas. The process concludes with the formation of conductive lines that connect to specified drains, sources, and gates, creating a desired circuit pattern.
Career Highlights
John Y Huang is currently employed at Atmel Corporation, where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of EEPROM devices, making them more efficient and reliable.
Collaborations
Huang has collaborated with notable coworkers such as Steven J Schumann and Geeng-Chuan Chern. Their combined expertise has contributed to the successful development of innovative technologies in the field.
Conclusion
John Y Huang is a distinguished inventor whose work in memory cell technology has led to significant advancements in the industry. His patents reflect a commitment to innovation and excellence in the field of electronics.