Shenorock, NY, United States of America

John V Powers


Average Co-Inventor Count = 3.4

ph-index = 6

Forward Citations = 139(Granted Patents)


Company Filing History:


Years Active: 1976-1981

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6 patents (USPTO):Explore Patents

Title: Innovations of John V Powers

Introduction

John V Powers is a notable inventor based in Shenorock, NY (US). He has made significant contributions to the field of microelectronics, holding a total of 6 patents. His work primarily focuses on advanced fabrication techniques for microelectronic structures.

Latest Patents

One of his latest patents is related to bubble device fabrication. This invention describes a single-level masking process for producing microelectronic structures, such as magnetic bubble domain devices, which require very fine line widths. The process is a subtractive dry method that utilizes a very thin, additively plated mask to achieve optimum lithographic resolution. By employing this thin plated mask, the need for a thick resist layer is eliminated, which would otherwise adversely affect resolution. In one example, a double-layer metallurgy comprising a conductor layer, such as gold (Au), and an overlying magnetically soft layer, such as nickel-iron (NiFe), is patterned using a thin titanium (Ti) or chromium (Cr) mask. The Ti mask is subtractively patterned using a NiFe mask, which is itself patterned by electroplating through a thin resist layer. This double-layer NiFe/Au structure is designed to provide devices with high aspect ratios, good pattern acuity, and uniform thicknesses, where the minimum feature is 1 micron or less.

Another significant patent involves nickel-X/gold/nickel-X conductors for solid-state devices. In this laminated conductor, a lower thin film of nickel-X alloy or pseudo-alloy is deposited upon a substrate containing silicon or intended for use as a magnetic bubble storage device. A thicker film of gold is then deposited on top of the nickel-X alloy, serving as the conductive portion of the conductor. Finally, a thin film of nickel-X alloy is deposited on the upper surface of the gold layer. This innovative structure dramatically reduces the failure of the conductor due to electromigration compared to using molybdenum instead of nickel. The non-magnetic nickel-X alloy does not interfere with magnetic fields or produce unwanted magnetic fields.

Career Highlights

John V Powers is currently associated with International Business Machines Corporation (IBM), where he continues to innovate in the field of microelectronics. His work has been instrumental in advancing the technology used in various electronic devices.

Collaborations

Throughout his career, John has collaborated with notable coworkers,

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