Location History:
- Kettering, OH (US) (1991)
- Dayton, OH (US) (1996)
Company Filing History:
Years Active: 1991-1996
Title: John R Sizelove: Innovator in Nondestructive Measurement Techniques
Introduction
John R Sizelove is a notable inventor based in Kettering, OH (US). He has made significant contributions to the field of materials science, particularly in the nondestructive measurement of dislocation density in Gallium Arsenide (GaAs) wafers. With a total of 2 patents, Sizelove's work has implications for the semiconductor industry and beyond.
Latest Patents
Sizelove's latest patents include a method for nondestructive measurement of dislocation density in GaAs and a method and system for automated measurement of whole-wafer etch pit density. The first patent describes a technique that tests an unetched GaAs wafer for fractional transmission of light at various points. This method allows for the calculation of the absorption coefficient and the identification of dislocation density regions without damaging the wafer. The second patent focuses on measuring etch pit density in GaAs wafers, utilizing fractional transmission data to convert measurements directly into etch pit density values.
Career Highlights
John R Sizelove is associated with the United States of America as represented by the Secretary of the Air Force. His work has been instrumental in advancing techniques that enhance the quality and reliability of semiconductor materials. His innovative approaches have garnered attention in both academic and industrial circles.
Collaborations
Sizelove has collaborated with notable colleagues such as David C Look and Millard G Mier. These partnerships have contributed to the development of advanced measurement techniques and have furthered research in the field.
Conclusion
John R Sizelove's contributions to nondestructive measurement techniques have made a significant impact on the semiconductor industry. His innovative patents reflect a commitment to advancing technology and improving material quality.