John K Boah

Title: John K Boah: A Inventive Mind at General Electric Corporation

Introduction:

In the world of inventors and innovators, John K Boah stands out as a brilliant mind making substantial contributions to the field of semiconductor devices. His expertise in the manufacture of semiconductor devices has led him to obtain two patents, showcasing his acumen and dedication to his work. This article will delve into his latest patents, his work at General Electric Corporation, and his collaboration with his esteemed coworker, Richard W Kennedy.

Overview of Patents:

1. Method of manufacture of a semiconductor device:

John K Boah's first patent revolves around a method for manufacturing a semiconductor device. This invention entails using a semiconductor wafer with three stacked regions. The inner region exhibits a single conductivity type, whereas the two outer regions exhibit the opposite conductivity type. To separate the wafer into multiple device regions, the temperature gradient zone melting process is employed to create isolation regions of the opposite conductivity type. Peripheral grooves are then cut into one major surface of each device region, extending into the interior region to electrically isolate a portion of the major surface within the grooves from the other major surface. These grooves are filled with a passivation material, which enhances the device's performance and stability.

2. Semiconductor device and method of manufacture thereof:

In his second patent, John K Boah presents another innovation in semiconductor device manufacturing. This patent follows a similar concept to the previous one, employing a semiconductor wafer with three stacked regions exhibiting different conductivity types. The temperature gradient zone melting process is once again utilized to create isolation regions, separating the wafer into multiple device regions. Peripheral grooves are cut into one major surface of each device region, extending into the inner region to electrically isolate a portion of the major surface within the grooves from the other major surface. These grooves are subsequently filled with a passivation material.

Work at General Electric Corporation:

John K Boah is a valued member of the research and development team at General Electric Corporation (GEC), a renowned multinational conglomerate. GEC prides itself on a rich heritage of innovation and technological advancements, making it the perfect platform for someone like John to contribute his creative genius. The company provides a stimulating environment that encourages inventors like John to explore new avenues and develop groundbreaking solutions.

Collaboration with Richard W Kennedy:

Richard W Kennedy is John K Boah's esteemed coworker at GEC. Together, they work tirelessly to push the boundaries of semiconductor device manufacturing. Their collaborative efforts have undoubtedly played a significant role in the success and development of their patents. By combining their knowledge, expertise, and complementary skill sets, they have been able to innovate and create technological advancements that have the potential to revolutionize the semiconductor industry.

Conclusion:

John K Boah's achievements as an inventor in the field of semiconductor devices are commendable. With two patents to his name, his contributions to the industry are shaping the future of technology. Through his work at General Electric Corporation and his collaborative efforts with colleague Richard W Kennedy, John continues to strive for excellence and push the boundaries of innovation in semiconductor device manufacturing.