Company Filing History:
Years Active: 2003-2004
Title: Innovations of John J Yourkas in Semiconductor Technology
Introduction
John J Yourkas is a notable inventor based in Stamford, CT, who has made significant contributions to the field of semiconductor technology. He is recognized for his innovative approaches to enhancing the performance of MOS devices. With a total of 2 patents, his work has had a considerable impact on the industry.
Latest Patents
Yourkas's latest patents include a process for passivating the semiconductor-dielectric interface of a MOS device and a MOS device formed thereby. The first patent describes a method to reduce the interface state density of a MOS structure to a very low level. This is particularly relevant for MOSFETs with tungsten electrodes, which have historically posed challenges in passivating the underlying semiconductor-dielectric interface. The patent outlines three general approaches to achieve this, including forming an aluminum-tungsten electrode stack in the presence of hydrogen, subjecting a tungsten electrode to hydrogen plasma, and implanting atomic hydrogen into the tungsten electrode.
The second patent focuses on a MOS structure that has a passivated semiconductor-dielectric interface, which is crucial for reducing the interface state density. This innovation allows for atomic hydrogen diffusion through a sufficiently thin electrode, enhancing the performance of the MOS device.
Career Highlights
John J Yourkas is currently employed at International Business Machines Corporation (IBM), where he continues to develop cutting-edge technologies in semiconductor devices. His work at IBM has positioned him as a key player in the advancement of MOS technology.
Collaborations
Yourkas has collaborated with notable colleagues such as Paul Michael Solomon and Douglas A Buchanan, contributing to a dynamic research environment that fosters innovation and development in semiconductor technology.
Conclusion
John J Yourkas's contributions to the field of semiconductor technology through his patents and work at IBM highlight his role as an influential inventor. His innovative approaches to passivating semiconductor-dielectric interfaces are paving the way for advancements in MOS devices.