Company Filing History:
1 out of 832,843 Years Active: 2002
Title: John Faltermeier: Innovator in Semiconductor Technology
Introduction
John Faltermeier is a notable inventor based in LaGrange, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of dielectric layer growth on substrates. His innovative approach addresses challenges associated with orientation-dependent oxidation in semiconductor manufacturing.
Latest Patents
Faltermeier holds a patent titled "Reduction of orientation dependent oxidation for vertical sidewalls of semiconductor substrates." This patent describes a method for growing a dielectric layer on a substrate that has at least two crystallographic planes. These planes experience different growth rates for the dielectric layer. The method involves growing a first dielectric layer with varying thicknesses on the different crystallographic planes, followed by the implantation of dopants. The process ensures that a greater number of dopants are implanted through the thinner section of the dielectric layer, ultimately leading to improved semiconductor performance.
Career Highlights
Throughout his career, John Faltermeier has demonstrated a commitment to advancing semiconductor technology. His work has led to the development of methods that enhance the efficiency and effectiveness of dielectric layer growth. With a patent portfolio that includes 1 patent, he continues to influence the industry with his innovative ideas.
Collaborations
Faltermeier has collaborated with notable colleagues, including Helmut Horst Tews and Brian S Lee. These partnerships have fostered an environment of innovation and have contributed to the successful development of new technologies in the semiconductor field.
Conclusion
John Faltermeier's contributions to semiconductor technology exemplify the impact of innovative thinking in the industry. His patent on dielectric layer growth showcases his ability to solve complex problems and improve manufacturing processes. As he continues to work in this dynamic field, his influence is likely to grow, paving the way for future advancements.