Sunnyvale, CA, United States of America

John F Osborne


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 101(Granted Patents)


Company Filing History:


Years Active: 1988

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1 patent (USPTO):Explore Patents

Title: John F Osborne: Innovator in Laser Planarization Technology

Introduction

John F Osborne is a notable inventor based in Sunnyvale, CA (US). He has made significant contributions to the field of integrated circuit technology, particularly through his innovative patent related to laser planarization.

Latest Patents

Osborne holds a patent for "Laser planarization of nonrefractory metal during integrated circuit." This invention involves the use of optical pulses from a laser, such as a xenon chloride excimer laser, to momentarily melt nonrefractory micrometer-thick deposited metals, like aluminum and aluminum alloy films, on integrated circuits. The process enhances the reflow of the metal upon melting by preheating the substrate and any intervening dielectric and conductive layers to approximately one-half the melting temperature of the metal. This technique improves planarization and reduces stress in the resolidified metal, making it an attractive method for fabricating multilayer interconnect structures.

Career Highlights

Osborne's career is marked by his work at Xmr, Inc., where he has applied his expertise in laser technology to advance integrated circuit fabrication. His innovative approach has led to improved step coverage and via filling without damaging lower layers of interconnect.

Collaborations

Osborne has collaborated with notable colleagues, including Thomas J Magee and Peter Gildea, contributing to advancements in their shared field of expertise.

Conclusion

John F Osborne's contributions to laser planarization technology have significantly impacted the field of integrated circuits. His innovative patent demonstrates the potential for enhanced fabrication techniques in modern electronics.

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