Company Filing History:
Years Active: 1977
Title: John Christian De Winter: Innovator in III-V Layer Growth
Introduction
John Christian De Winter is a notable inventor based in Howell Township, Monmouth County, NJ. He has made significant contributions to the field of semiconductor technology, particularly in the growth of III-V layers containing arsenic, antimony, and phosphorus. His work has implications for various electronic devices, enhancing their performance and efficiency.
Latest Patents
John Christian De Winter holds a patent for the growth of Gallium arsenide antimonide phosphide (GaAsSbP) on a gallium arsenide substrate through liquid phase epitaxy. This innovative process involves the critical depletion of phosphorus in the growth solution, leading to a graded lattice constant and bandgap in the epitaxially grown layer. The resulting substrate and graded layer are well-suited for use in electronic devices such as double heterostructure lasers, light-emitting diodes, Schottky barrier diodes, and p-n junction photodiodes, particularly in the near-infrared low loss region of optical fibers.
Career Highlights
John Christian De Winter has had a distinguished career at Bell Telephone Laboratories, where he has been instrumental in advancing semiconductor technologies. His expertise in liquid phase epitaxy has positioned him as a key figure in the development of materials that are critical for modern electronic applications.
Collaborations
Throughout his career, John has collaborated with esteemed colleagues, including Robert E. Nahory and Martin Alan Pollack. These collaborations have fostered innovation and contributed to the success of various projects within the field.
Conclusion
John Christian De Winter's contributions to the growth of III-V layers and his patent for GaAsSbP highlight his significant role in semiconductor technology. His work continues to influence the development of advanced electronic devices, showcasing the importance of innovation in this field.