John C DeWinter

Title: The Innovations of John C DeWinter

Introduction

John C DeWinter is a notable inventor based in Howell Township, Monmouth County, NJ. He has made significant contributions to the field of materials science, particularly in the growth of III-V semiconductor layers. His work has implications for various electronic devices, showcasing the importance of innovation in technology.

Latest Patents

John C DeWinter holds a patent for the "Growth of III-V layers containing arsenic, antimony and phosphorus." This patent details the successful growth of Gallium arsenide antimonide phosphide (GaAsSbP) on a gallium arsenide substrate through liquid phase epitaxy. A critical amount of phosphorus in the growth solution is initially depleted, leading to a grading of lattice constant and bandgap in the epitaxially grown layer. This substrate and graded layer are well-suited for use in electronic devices such as double heterostructure lasers, light-emitting diodes, Schottky barrier diodes, and p-n junction photodiodes in the near-infrared low loss region of optical fibers. He has 1 patent to his name.

Career Highlights

John C DeWinter has had a distinguished career at Bell Telephone Laboratories, where he has been involved in groundbreaking research and development. His work has contributed to advancements in semiconductor technology, which are crucial for modern electronic applications.

Collaborations

Throughout his career, John has collaborated with esteemed colleagues such as Robert E Nahory and Martin Alan Pollack. These collaborations have further enriched his research and have led to significant advancements in the field.

Conclusion

John C DeWinter's innovative work in the growth of semiconductor layers has made a lasting impact on the electronics industry. His contributions continue to influence the development of advanced electronic devices.