Company Filing History:
Years Active: 2005
Title: Innovations by Joe Baker Gagnon
Introduction
Joe Baker Gagnon is an accomplished inventor based in Waterbury Center, Vermont. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent that enhances x-ray lithography processes.
Latest Patents
Gagnon's notable patent is titled "Method of improving x-ray lithography in the sub 100nm range to create high quality semiconductor devices." This invention focuses on producing high-quality semiconductor devices at speeds and sizes that surpass current x-ray lithography capabilities. The method involves several advanced steps, including the use of horizontal beams from a synchrotron or point source of x-ray beams, preparation of submicrometer stages, and the implementation of environmental controls to minimize temperature and airflow effects. Additionally, it enhances positional accuracy through differential variable reluctance transducers and incorporates alignment systems for precise imaging.
Career Highlights
Gagnon is associated with Sal, Inc., where he applies his expertise in semiconductor device production. His work has been pivotal in advancing the capabilities of x-ray lithography, contributing to the development of high-quality semiconductor devices.
Collaborations
Throughout his career, Gagnon has collaborated with notable colleagues, including Robert Allen Selzer and Franz Ludwig Rauch. These partnerships have further enriched his work and contributed to the success of his innovations.
Conclusion
Joe Baker Gagnon stands out as a significant figure in the field of semiconductor technology. His innovative patent demonstrates his commitment to advancing x-ray lithography and improving the production of high-quality semiconductor devices.