Company Filing History:
Years Active: 1999
Title: Jochen Hanebeck: Innovator in Semiconductor Processing
Introduction
Jochen Hanebeck is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor processing, particularly in the area of etching techniques. His work has implications for improving the efficiency and effectiveness of semiconductor manufacturing.
Latest Patents
Hanebeck holds a patent for "Techniques for etching a silicon dioxide-containing layer." This innovative method is utilized in a plasma processing chamber to enhance oxide-to-nitride selectivity while etching a borophosphosilicate glass (BPSG)-containing layer. The process involves creating a self-aligned contact on a semiconductor substrate, which is crucial for modern electronic devices. The method includes placing the substrate into the plasma processing chamber and flowing an etchant source gas that comprises C₄F₈ and an additive gas with a specific molecular composition. The use of a radio frequency (RF) power source at 13.56 MHz is essential for striking a plasma from the etchant source gas, allowing for effective etching through the BPSG-containing layer.
Career Highlights
Jochen Hanebeck is currently employed at Siemens Aktiengesellschaft, where he continues to advance his research and development efforts in semiconductor technologies. His expertise in plasma processing and etching techniques has positioned him as a key figure in the industry.
Collaborations
Hanebeck collaborates with various professionals in his field, including his coworker Markus M Kirchhoff. Their combined efforts contribute to the ongoing innovation and improvement of semiconductor manufacturing processes.
Conclusion
Jochen Hanebeck's contributions to semiconductor processing through his patented techniques demonstrate his commitment to advancing technology in this critical field. His work not only enhances manufacturing processes but also supports the development of more efficient electronic devices.