Joao R Conde

Title: Innovations of Joao R Conde in Plasma Processing Technology

Introduction

Joao R Conde is a notable inventor based in Lisbon, Portugal. He has made significant contributions to the field of plasma processing technology, particularly in the development of systems for thin film deposition. His innovative work has led to the creation of a unique patent that enhances the efficiency of chemical vapor deposition processes.

Latest Patents

Joao R Conde holds a patent for a "Plasma enhanced chemical vapor processing system using hollow cathode." This high-efficiency, low-temperature system is designed for growing or depositing various types of thin films on substrate surfaces. The technology utilizes a hollow-cathode-effect electron source to create a localized plasma at the substrate surface, which enhances the density of reactive species. This innovation allows for increased growth rates of films or etching processes at significantly lower temperatures and power levels.

Career Highlights

Joao R Conde is associated with the International Business Machines Corporation (IBM), where he has applied his expertise in plasma processing technology. His work has been instrumental in advancing the capabilities of thin film deposition, particularly in the growth of hydrogenated amorphous silicon at room temperature. This achievement is notable for its potential applications in various electronic and optoelectronic devices.

Collaborations

Joao R Conde has collaborated with esteemed colleagues such as Joseph M Blum and Bruce Bumble. Their combined efforts have contributed to the advancement of plasma processing technologies and have fostered innovation within their field.

Conclusion

Joao R Conde's contributions to plasma processing technology exemplify the impact of innovative thinking in the field of thin film deposition. His patent and work at IBM highlight the importance of advancements in this area, paving the way for future developments in material science and engineering.