Company Filing History:
Years Active: 1993
Title: Joachim Imschweiler: Innovator in Semiconductor Technology
Introduction
Joachim Imschweiler is a notable inventor based in Heilbronn-Bockingen, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for recrystallization.
Latest Patents
Imschweiler holds a patent for a "Method for recrystallization of preamorphized semiconductor surfaces." This method involves thermal annealing of amorphous surface layers on a single-crystal semiconductor base element. The amorphous surface layer is created by implanting germanium or silicon ions into a single-crystal silicon base element. The process includes doping the amorphous layer with impurities and subjecting it to a three-step annealing process. The first step smooths the interface region between the amorphous layer and the single-crystal base element at temperatures between 400°C and 460°C. The second step allows the amorphous layer to recrystallize at temperatures between 500°C and 600°C. Finally, the third step activates the dopants using a rapid thermal annealing (RTA) process.
Career Highlights
Joachim Imschweiler is currently employed at Telefunken Electronic GmbH, where he continues to advance semiconductor technologies. His work has been instrumental in improving the efficiency and performance of semiconductor devices.
Collaborations
Imschweiler has collaborated with notable colleagues, including Heinz-Achim Hefner and Michael Seibt, contributing to various projects in the semiconductor field.
Conclusion
Joachim Imschweiler's innovative methods in semiconductor technology highlight his expertise and dedication to advancing the field. His contributions, particularly through his patented methods, continue to influence the development of semiconductor devices.