Company Filing History:
Years Active: 2022-2024
Title: Jinoh Ahn: Innovator in Memory Module Technology
Introduction
Jinoh Ahn is a notable inventor based in Gwacheon-si, South Korea. He has made significant contributions to the field of memory module technology, holding a total of 3 patents. His work is primarily associated with Samsung Electronics Co., Ltd., where he continues to innovate and develop advanced technologies.
Latest Patents
One of Jinoh Ahn's latest patents is focused on a module board and memory module that includes a unique design for signal lines. The module board features a first branch line that connects a clock signal terminal to a first branch point. It also includes a first signal line connecting the first branch point to a first module clock signal terminal, along with a second signal line that connects the first module clock signal terminal to a k-module clock signal terminal. Additionally, there are third and fourth signal lines that connect to (k+1) and 2k module clock signal terminals, respectively. Notably, the length of the third signal line is greater than the combined lengths of the first and second signal lines, showcasing an innovative approach to memory module design.
Career Highlights
Throughout his career, Jinoh Ahn has been recognized for his contributions to memory technology. His work at Samsung Electronics Co., Ltd. has positioned him as a key player in the development of advanced memory solutions. His patents reflect a deep understanding of the complexities involved in memory module design and functionality.
Collaborations
Jinoh Ahn has collaborated with several talented individuals in his field, including Wonseop Lee and Hwanwook Park. These collaborations have fostered an environment of innovation and creativity, leading to the development of cutting-edge technologies in memory modules.
Conclusion
Jinoh Ahn's contributions to memory module technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to shape the future of memory technology, making significant strides in enhancing performance and efficiency.