Company Filing History:
Years Active: 2003
Title: Jin-kyeong Kim: Innovator in High Voltage Semiconductor Technology
Introduction
Jin-kyeong Kim is a prominent inventor based in Incheon, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of high voltage semiconductor devices. His innovative approach has led to advancements that enhance device performance and reliability.
Latest Patents
Jin-kyeong Kim holds 1 patent for his invention titled "Method of fabricating a high voltage semiconductor device using SIPOS." This patent describes a high voltage semiconductor device that includes a semiconductor substrate with a semi-insulating polycrystalline silicon layer. This layer alleviates electric field concentration in the field region. A thermal oxide layer is formed on the semi-insulating polycrystalline silicon layer, serving as a protective layer. This thermal oxide layer creates a superior interface compared to other oxide layers, significantly reducing leakage current. Additionally, it provides high surface protection and resistance against dielectric breakdown, while also allowing for a reduction in fabrication time.
Career Highlights
Jin-kyeong Kim is currently employed at Fairchild Korea Semiconductor Ltd. His work at this company has been instrumental in advancing semiconductor technologies. His expertise in high voltage devices has positioned him as a key figure in the industry.
Collaborations
Jin-kyeong Kim has collaborated with notable colleagues, including Jong-min Kim and Kyung-Wook Kim. These partnerships have fostered innovation and contributed to the success of their projects.
Conclusion
Jin-kyeong Kim's contributions to high voltage semiconductor technology exemplify his dedication to innovation. His patent reflects a significant advancement in the field, showcasing his ability to enhance device performance and efficiency. His work continues to influence the semiconductor industry positively.