Company Filing History:
Years Active: 1998
Title: Innovations in Semiconductor Lasers by Jin J Kim
Introduction
Jin J Kim is an accomplished inventor based in Winter Springs, FL (US). She has made significant contributions to the field of semiconductor lasers, particularly with her innovative approach to p-Ge lasers. Her work focuses on improving the efficiency and functionality of these lasers, which are essential in various technological applications.
Latest Patents
Jin J Kim holds a patent for "Bulk semiconductor lasers at submillimeter/far infrared wavelengths." This invention describes a p-Ge laser operating at submillimeter wavelengths in Voigt configuration using a regular permanent magnet. Unlike prior art Ge lasers that require superconducting magnets cooled by liquid helium, her invention allows for the use of a closed-cycle refrigerator to cool the Ge crystal, eliminating the need for liquid helium. The emissions from her novel invention demonstrate a wider range of electric-field magnitude in Voigt configuration compared to previous systems. The free space beam profile is Gaussian, and the design facilitates the use of cooling fins and heat sinks, enhancing the repetition rate and energy output.
Career Highlights
Jin J Kim is affiliated with the University of Central Florida Research Foundation, Inc. Her work has garnered attention for its innovative approach to semiconductor technology. She has successfully developed a laser configuration that allows for greater flexibility in design, including the potential for ring lasers and oscillator/amplifiers, which were not possible with previous p-Ge lasers.
Collaborations
Throughout her career, Jin J Kim has collaborated with notable colleagues, including Robert E Peale and Kijun Park. These collaborations have contributed to the advancement of her research and the development of her patented technologies.
Conclusion
Jin J Kim's contributions to the field of semiconductor lasers represent a significant advancement in technology. Her innovative approach not only improves the efficiency of p-Ge lasers but also opens new avenues for future research and development.