Gyeonggi-do, South Korea

Jin Hyock Kim

USPTO Granted Patents = 7 

Average Co-Inventor Count = 3.3

ph-index = 2

Forward Citations = 16(Granted Patents)


Location History:

  • Ichon-si, KR (2013)
  • Gyeonggi-do, KR (2013 - 2015)
  • Icheon-si, KR (2015)

Company Filing History:


Years Active: 2013-2015

Loading Chart...
7 patents (USPTO):Explore Patents

Title: Innovations of Jin Hyock Kim

Introduction

Jin Hyock Kim is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on improving the efficiency and functionality of semiconductor devices.

Latest Patents

One of his latest patents is for a semiconductor device and method of fabricating the same. This invention includes a semiconductor substrate with a word line region and a barrier metal layer that causes a Schottky junction. The barrier metal layer is composed of a mixture of two nitride materials, enhancing the device's performance. Another notable patent is for a fabrication method of a phase change memory device that features a self-aligned bottom electrode. This method improves the electric contact characteristics between the access device and the lower electrode, showcasing his innovative approach to semiconductor memory technology.

Career Highlights

Jin Hyock Kim has worked with leading companies in the semiconductor industry, including SK Hynix Inc. and Hynix Semiconductor Inc. His experience in these organizations has allowed him to develop cutting-edge technologies that have a lasting impact on the industry.

Collaborations

Throughout his career, Jin has collaborated with talented individuals such as Young Seok Kwon and Ja Chun Ku. These partnerships have contributed to the advancement of his research and innovations in semiconductor technology.

Conclusion

Jin Hyock Kim's contributions to the semiconductor field through his patents and collaborations highlight his role as a key innovator. His work continues to influence the development of advanced semiconductor devices and methods.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…