Company Filing History:
Years Active: 2008
Title: Innovations of Jie Su in Nanotechnology
Introduction
Jie Su is a prominent inventor based in New Haven, CT (US). He has made significant contributions to the field of nanotechnology, particularly in the growth of aligned AlGaN nanowires. His work has implications for various applications in electronics and materials science.
Latest Patents
Jie Su holds a patent titled "Epitaxial growth of aligned AlGaN nanowires by metal-organic chemical vapor deposition." This patent demonstrates highly ordered and aligned epitaxy of III-Nitride nanowires. The research identifies the 1 patent preferential M-axis as a growth direction through a detailed study of GaN/AlN trunk/branch nanostructures using transmission electron microscopy. The findings reveal that crystallographic selectivity can achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates, showcasing new opportunities for self-aligned nanowire devices, interconnects, and networks.
Career Highlights
Jie Su is affiliated with Yale University, where he continues to advance research in nanotechnology. His innovative approaches have garnered attention in the scientific community, contributing to the understanding and application of nanowire technology.
Collaborations
Jie Su has collaborated with Jung Han, further enhancing the research and development of nanostructures. Their partnership has led to significant advancements in the field.
Conclusion
Jie Su's work in the epitaxial growth of aligned AlGaN nanowires represents a significant advancement in nanotechnology. His contributions are paving the way for future innovations in electronic devices and materials.