Jiaqi Zhang

Title: Innovations of Jiaqi Zhang in Field Effect Transistors

Introduction

Jiaqi Zhang is a prominent inventor based in Xi'an, China. He has made significant contributions to the field of electronics, particularly in the development of advanced field effect transistors. His innovative work addresses critical challenges in semiconductor technology.

Latest Patents

Jiaqi Zhang holds a patent for a "Bidirectional blocking monolithic heterogeneous integrated cascode-structure field effect transistor, and manufacturing method thereof." This invention primarily solves the issue of the existing monolithic heterogeneous integrated cascode-structure field effect transistors lacking reverse blocking characteristics. The design includes a substrate, a GaN buffer layer, an AlGaN barrier layer, and a SiN isolation layer. An isolation groove is etched in the middle of the SiN isolation layer, allowing for the preparation of a Si metal oxide semiconductor field effect transistor on one side and a GaN high-electron-mobility transistor on the other side. The drain electrode of the GaN high-electron-mobility transistor is in Schottky contact with the AlGaN barrier layer, forming a bidirectional blocking monolithic heterogeneous integrated cascode-structure field effect transistor.

Career Highlights

Jiaqi Zhang is affiliated with Xidian University, where he continues to advance his research in semiconductor technology. His work has garnered attention for its innovative approach and practical applications in the electronics industry.

Collaborations

Jiaqi Zhang collaborates with notable colleagues, including Chunfu Zhang and Weihang Zhang, who contribute to his research endeavors and enhance the collaborative environment at Xidian University.

Conclusion

Jiaqi Zhang's contributions to the field of field effect transistors exemplify the importance of innovation in technology. His patent addresses significant challenges in the industry, showcasing his expertise and commitment to advancing semiconductor technology.