Jiantao Bian

Title: Innovator Spotlight: Jiantao Bian from Shanghai, CN

Introduction: Jiantao Bian is a notable inventor based in Shanghai, China, recognized for his contributions to the fields of semiconductor technology and material science. With a total of three patents to his name, Bian is at the forefront of innovative solutions that enhance production efficiency and reduce costs in electronic materials.

Latest Patents: Bian's recent inventions showcase his expertise and innovative thinking. One of his key patents is a "Method for preparing ultra-thin material on insulator through adsorption by doped ultra-thin layer." This invention details a process for creating ultra-thin materials on insulators, employing ion implantation and bonding processes to achieve materials ranging from 5 nm to 50 nm in thickness. The method emphasizes reducing roughness and production damage while improving efficiency and lowering costs.

Another significant patent is the "Silicon-germanium heterojunction tunnel field effect transistor and preparation method thereof." This innovation involves constructing a TFET with a source region made from silicon germanium (SiGe) and a drain region from silicon. By utilizing local Ge oxidization and concentration techniques, Bian effectively controls Ge content and film thickness, allowing for defect elimination and compatibility with CMOS processes, suitable for mass production.

Career Highlights: Jiantao Bian has made significant strides in the realm of semiconductor research, primarily through his positions at the Shanghai Institute of Microsystem and Information Technology, part of the Chinese Academy of Sciences. His work has focused on the integration of innovative methods to enhance semiconductor devices, which has established him as a key figure in the field.

Collaborations: Throughout his career, Bian has collaborated with notable colleagues, including Zengfeng Di and Miao Zhang. These partnerships have facilitated advancements in research and development, leading to more robust and efficient technologies in semiconductor applications.

Conclusion: Jiantao Bian's contributions to modern technology through his patents and collaborative efforts highlight the importance of innovation in advancing semiconductor applications. His work serves as an inspiration for future inventors and emphasizes the critical role that research plays in technological progress.