Jiabo Liang

Title: Jiabo Liang: Innovator in SiC Ohmic Contact Technology

Introduction

Jiabo Liang is a prominent inventor based in Xi'an, China. He has made significant contributions to the field of semiconductor technology, particularly in the preparation of SiC ohmic contacts. His innovative methods have the potential to enhance the performance of electronic devices.

Latest Patents

Jiabo Liang holds a patent for a method of preparing SiC ohmic contact with low specific contact resistivity. This method involves selecting a SiC substrate and preparing a graphene/SiC structure by forming graphene on the Si-face of the SiC substrate. The process includes depositing an Au film on the graphene, creating a first transfer electrode pattern through photolithography, and etching the Au film and graphene to form a second transfer electrode pattern. The resulting Au electrode is then annealed, leading to a specific contact resistance of approximately 10˜10Ω·cm. This method demonstrates high repeatability and effectively reduces the potential barrier associated with the SiC interface.

Career Highlights

Jiabo Liang is affiliated with Xidian University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its practical applications in improving electronic device efficiency.

Collaborations

Jiabo Liang collaborates with notable colleagues, including Yanfei Hu and Hui Guo, who contribute to his research endeavors.

Conclusion

Jiabo Liang's innovative approach to SiC ohmic contact preparation showcases his expertise and commitment to advancing semiconductor technology. His contributions are poised to make a lasting impact in the field.