Company Filing History:
1 out of 806 
1 out of 19 
1 out of 832,761 Years Active: 2003-2005
Title: Ji Zhang: Innovator in Quantum Dot Technology
Introduction
Ji Zhang is a prominent inventor based in Singapore, known for his contributions to the field of quantum dot technology. He holds 2 patents that focus on the formation of indium nitride (InN) and indium gallium nitride (InGaN) quantum dots. His work has significant implications for the development of light-emitting diodes (LEDs).
Latest Patents
Ji Zhang's latest patents involve the formation of indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD). These quantum dots are embedded in single and multiple InGaN/InGaN quantum wells (QWs) and are formed using TMIn and/or Triethylindium (TEIn) and Ethyldimethylindium (EDMIn) as antisurfactants during MOCVD growth. The photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and other indium precursors are crucial for triggering the formation of dislocation-free quantum dots, as are the subsequent flows of ammonia and TMIn. This method can be readily applied for the growth of the active layers of blue and green LEDs.
Career Highlights
Throughout his career, Ji Zhang has worked with notable institutions, including the National University of Singapore. His research has advanced the understanding and application of quantum dot technology, making significant contributions to the field.
Collaborations
Ji Zhang has collaborated with several professionals in his field, including Soo Jin Chua and Peng Li. These collaborations have further enriched his research and innovation efforts.
Conclusion
Ji Zhang is a key figure in the development of quantum dot technology, with a focus on indium nitride and indium gallium nitride materials. His innovative work continues to influence the future of LED technology and related applications.