Ji H Yoo

Title: The Innovative Contributions of Ji H Yoo

Introduction

Ji H Yoo is a notable inventor based in Bucheon, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of BICMOS devices. His innovative approach has simplified complex processes, making him a valuable asset in the industry.

Latest Patents

Ji H Yoo holds a patent for a "Method for manufacturing BICMOS devices." This patent describes a method where the emitter and base of a vertical PNP transistor are self-aligned. The process involves forming an extrinsic base by adapting a base electrode polysilicon layer as a diffusion source. Additionally, the base electrode and intrinsic base are coupled by the diffusion of N type impurities, utilizing N.sup.+ polysilicon as a diffusion source. This innovation simplifies the manufacturing process and reduces the resistance of the extrinsic base. He has 1 patent to his name.

Career Highlights

Ji H Yoo is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work at Samsung has allowed him to push the boundaries of semiconductor technology and contribute to advancements in electronic devices.

Collaborations

Throughout his career, Ji H Yoo has collaborated with talented individuals such as Tae Yeon Won and Moon Hwan Kim. These collaborations have fostered an environment of innovation and creativity, leading to groundbreaking developments in their field.

Conclusion

Ji H Yoo's contributions to the field of semiconductor technology, particularly through his patent for manufacturing BICMOS devices, highlight his innovative spirit and dedication to advancing technology. His work at Samsung Electronics Co., Ltd. and collaborations with esteemed colleagues further emphasize his impact on the industry.