Jhy-Weei Hsia

Title: Jhy-Weei Hsia: Innovator in Semiconductor Technology

Introduction

Jhy-Weei Hsia is a notable inventor based in Taipei Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods in manufacturing isolation structures.

Latest Patents

Jhy-Weei Hsia holds a patent for a "Method of forming shallow trench isolation structure." This patent describes a process for creating a shallow trench isolation structure that involves several steps. Initially, a pad oxide layer and a mask layer are formed over a substrate. Portions of these layers are then removed to create a trench. The oxidation of the substrate within the trench results in a linear oxide layer. The substrate at the bottom of the trench is exposed by removing part of the linear oxide layer. A polysilicon layer is deposited to fill the trench, and after removing excess polysilicon, a polysilicon plug is formed. A thin conformal barrier layer is then created over the substrate, followed by the deposition of an insulator layer. Finally, the isolation and barrier layers on top of the mask and outside the trench are removed using a chemical mechanical polishing method, and the mask is subsequently removed.

Career Highlights

Jhy-Weei Hsia is currently employed at Vanguard International Semiconductor Corporation, where he continues to advance semiconductor technologies. His work has been instrumental in improving manufacturing processes within the industry.

Collaborations

He has collaborated with notable colleagues, including Yin-Pin Wang and Chung-Ju Lee, contributing to various projects and innovations in semiconductor technology.

Conclusion

Jhy-Weei Hsia's contributions to the field of semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the industry. His work continues to influence the development of efficient manufacturing processes in semiconductor fabrication.