Melbourne, FL, United States of America

Jesse A Johnson, Ii

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Innovations by Jesse A Johnson, Ii

Introduction

Jesse A Johnson, Ii is an accomplished inventor based in Melbourne, FL (US). She has made significant contributions to the field of materials science, particularly in the area of silicon carbide (SiC) substrates. Her innovative work has led to advancements in epitaxial growth methods, which are crucial for various applications in electronics and optoelectronics.

Latest Patents

Jesse holds a patent titled "Controlled surface chemistry for polytypic and microstructural selective growth on hexagonal SiC substrates." This patent describes a high-throughput method for identifying single crystal hexagonal-SiC off-axis surfaces that support surface chemistries and kinetics to selectively produce various epitaxial growth modes of the metastable 3C-SiC polytype. The method encompasses the use of a single crystal hexagonal-SiC domed substrate and a method for manufacturing it. The process includes fabricating a silicon carbide domed substrate, forming a step-terrace growth surface through hydrogen etching, and performing silicon carbide deposition to create an epitaxial domed wafer. This innovative approach allows for the modulation of the supersaturation ratio under a single set of growth conditions.

Career Highlights

Jesse is currently employed at Mainstream Engineering Corporation, where she continues to push the boundaries of research and development in her field. Her work has not only contributed to her company's success but has also advanced the understanding of silicon carbide materials.

Collaborations

Jesse collaborates with talented individuals such as Brian P Tucker and Adam J Duzik, who contribute to her research efforts and help drive innovation within the company.

Conclusion

Jesse A Johnson, Ii is a pioneering inventor whose work in silicon carbide substrates has the potential to revolutionize various technological applications. Her dedication to innovation and collaboration exemplifies the spirit of advancement in materials science.

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