Jer-Hueih(James) Chen

Title: The Innovative Contributions of Jer-Hueih (James) Chen

Introduction

Jer-Hueih (James) Chen is a notable inventor based in Waterford, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of self-aligned shallow trench isolation (STI) regions. His work has implications for the advancement of epitaxial growth processes in silicon substrates.

Latest Patents

Jer-Hueih (James) Chen holds a patent for a method titled "Preserving the seed layer on STI edge and improving the epitaxial growth." This innovative method involves forming self-aligned STI regions that extend over portions of a silicon substrate. The process enables the subsequent formation of epitaxially grown embedded source/drain (S/D) regions without the need for a lithography mask. The patent outlines several steps, including the formation of a STI etch mask, shallow trenches, oxide spacers, and a deep STI trench, culminating in the planarization of the STI oxide layer.

Career Highlights

Currently, Jer-Hueih (James) Chen is employed at Globalfoundries Inc., a leading semiconductor manufacturer. His expertise in semiconductor fabrication processes has positioned him as a valuable asset to the company. With a focus on innovation, he continues to contribute to advancements in the industry.

Collaborations

Throughout his career, Jer-Hueih (James) Chen has collaborated with talented colleagues, including Jing Wan and Cuiqin Xu. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Jer-Hueih (James) Chen's contributions to semiconductor technology exemplify the spirit of innovation. His patent and work at Globalfoundries Inc. highlight his commitment to advancing the field. His collaborations further enhance the potential for future breakthroughs in semiconductor manufacturing.