Jennifer L Gardner

Title: Innovations of Jennifer L Gardner

Introduction

Jennifer L Gardner is a notable inventor based in Hopewell Junction, NY (US). She has made significant contributions to the field of chemical vapor deposition, particularly in the incorporation of nitrogen into materials such as germanium and antimony. With a total of two patents to her name, her work has implications for various technological applications.

Latest Patents

One of her latest patents is a chemical vapor deposition (CVD) method for the incorporation of nitrogen into materials including germanium (Ge), antimony (Sb), and nitrogen (N). This innovative CVD method allows for the deposition of materials that can fill high aspect ratio openings. The method enables control over the nitrogen-doped GeSb stoichiometry across a wide range of values. It is performed at a substrate temperature of less than 400°C, making it compatible with existing interconnect processes and materials. The method can be non-selective, allowing for deposition on both insulating and non-insulating materials, or selective, where deposition occurs only on specific regions of a substrate in a metal capable of forming an eutectic alloy with germanium.

Career Highlights

Jennifer L Gardner is currently employed at International Business Machines Corporation (IBM), where she continues to innovate and develop new technologies. Her work has been instrumental in advancing the field of materials science and engineering.

Collaborations

Some of her notable coworkers include John Jacob Yurkas and Fenton Reed Mc Feely. Their collaborative efforts contribute to the innovative environment at IBM.

Conclusion

Jennifer L Gardner's contributions to the field of chemical vapor deposition and her innovative patents highlight her role as a leading inventor in her field. Her work continues to influence advancements in technology and materials science.