Jeffrey Lutze

Title: Innovations by Jeffrey Lutze

Introduction

Jeffrey Lutze is a notable inventor based in Austin, TX, who has made significant contributions to the field of semiconductor technology. He holds 2 patents that showcase his expertise in fabricating advanced electronic devices. His work primarily focuses on improving the performance and efficiency of MOSFETs and CMOS devices.

Latest Patents

Lutze's latest patents include a "Process for fabricating a fully self-aligned SOI MOSFET" and a "Method for making CMOS device having reduced parasitic capacitance." The first patent details a process that involves forming an active region isolated by field isolation regions and an insulating layer. It describes the creation of a recess in the active region, followed by the deposition of a gate dielectric layer and a polycrystalline silicon layer. The process culminates in a planarization step to form a gate electrode, with source and drain regions formed in a self-aligned manner. The second patent focuses on a CMOS device that reduces parasitic junction capacitance by utilizing an undoped epitaxial layer to separate source and drain regions from buried layers in a semiconductor substrate.

Career Highlights

Jeffrey Lutze has had a distinguished career at Motorola Corporation, where he has applied his innovative ideas to develop cutting-edge technologies. His work has contributed to advancements in semiconductor fabrication techniques, enhancing the performance of electronic devices.

Collaborations

Lutze has collaborated with esteemed colleagues such as Suresh Venkatesan and Stephen S. Poon, further enriching his contributions to the field of semiconductor technology.

Conclusion

Jeffrey Lutze's innovative patents and career at Motorola Corporation highlight his significant impact on semiconductor technology. His work continues to influence the development of efficient electronic devices.