Company Filing History:
Years Active: 1992
Title: The Innovative Contributions of Jeffrey G Mansmann in Semiconductor Technology
Introduction
Jeffrey G Mansmann, an inventor based in Raleigh, NC, USA, has made significant strides in the field of semiconductor technology. His inventive prowess is demonstrated through his patented development, which showcases his expertise and innovative thinking in the design and functionality of semiconductor devices.
Latest Patents
Mansmann holds a patent for a "Power VDMOSFET with Schottky on Lightly Doped Drain of Lateral Driver FET." This monolithic semiconductor device integrates a VDMOS transistor that features first and second main electrodes, along with a control electrode, complemented by a lateral MOSFET. The key innovation lies in the lower doping concentration of one electrode of the lateral MOSFET compared to the main electrodes of the VDMOS transistor, which aids in forming a Schottky barrier diode.
Career Highlights
Jeffrey G Mansmann is affiliated with Harris Corporation, where he has had a notable impact on the development and enhancement of semiconductor technologies. His role at the company illustrates his commitment to advancing engineering solutions that contribute to various applications in the industry.
Collaborations
Throughout his career, Mansmann has collaborated with esteemed colleagues, including Frederick P Jones and Joseph A Yedinak. These partnerships have likely contributed to the innovative work produced in the field of semiconductor devices, enabling a blend of ideas and expertise to manifest in successful projects.
Conclusion
In summary, Jeffrey G Mansmann stands out as a significant figure in the realm of semiconductor innovation, with his patented technology showcasing practical advancements in the industry. His work at Harris Corporation, alongside prominent collaborators, signifies a dedication to innovation that will continue to shape the future of semiconductor engineering.