Company Filing History:
Years Active: 2008
Title: Inventor Profile: Jeffrey A. Mittereder
Introduction
Jeffrey A. Mittereder is an accomplished inventor based in Annandale, Virginia, recognized for his contributions to the field of electronic devices. With a patent under his name, Mittereder has made significant strides in enhancing the reliability of high electron mobility transistors (HEMTs). His innovative approach focuses on improving the functionality of these essential components for various electronic applications.
Latest Patents
Mittereder's notable patent, titled "Silicon Nitride Passivation with Ammonia Plasma Pretreatment for Improving Reliability of AlGaN/GaN HEMTs," addresses a vital advancement in transistor technology. This invention relates to a high electron mobility transistor characterized by the presence of a two-dimensional electron gas (2 DEG) channel. The technology involves a method for treating the device with ammonia plasma prior to passivation, ensuring that the device operates reliably for over 300 hours, with minimal gate lag and no degradation in RF power output.
Career Highlights
Jeffrey A. Mittereder's career is distinguished by his position at the United States of America, as represented by the Secretary of the Navy. With his background in electrical engineering and semiconductor technology, he has dedicated his professional journey to innovating robust solutions in electronic devices. Mittereder's work on HEMTs exemplifies his expertise and commitment to advancing technology in the field.
Collaborations
Mittereder has collaborated with several prominent figures in his line of work, including Andrew B. Edwards and Steven C. Binari. Their combined knowledge and expertise have been instrumental in advancing the research and development of HEMTs, contributing to the successful outcomes of various projects.
Conclusion
In conclusion, Jeffrey A. Mittereder stands out as a key figure in the realm of electronic device innovation. His contributions, particularly in enhancing the reliability of AlGaN/GaN HEMTs, reflect his dedication to advancing technology through invention. With ongoing collaborations and a solid foundation in research, Mittereder continues to be an influential inventor in his field, paving the way for future technological advancements.