Jeanne H Raymond

Title: Jeanne H. Raymond: Innovator in Voltage Binning Technologies

Introduction

Jeanne H. Raymond is a notable inventor based in Richmond, Vermont, recognized for her contributions to the field of voltage binning technologies. With a total of 3 patents, her work focuses on optimizing timing and power risk in integrated circuit designs.

Latest Patents

One of her latest patents is titled "Timing/power risk optimized selective voltage binning using non-linear voltage slope." This patent outlines systems and methods for optimizing timing and power risk selective voltage binning (SVB) using a customer-supplied, non-linear voltage slope. The process involves manufacturing chips according to an integrated circuit design, determining the minimum operating voltage and hardware variations for each device, and dividing the process distribution into process windows. The patent details how to calculate Vmin versus process-bin mean and sigma sensitivity, identify the voltage that generates Vmin, and evaluate power at both the slow and fast ends of each process window. Additionally, it describes how to determine Pmax and Vmax for each process window, ultimately identifying a voltage that maximizes timing margin while minimizing risk for Pmax.

Another significant patent is the "Selective voltage binning leakage screen," which discloses methods and structures for leakage screening. This method includes sorting devices manufactured from the same design into voltage bins corresponding to their respective supply voltages. It further involves determining the total power and uplift power of each voltage bin, as well as calculating a first leakage screen value based on the uplift power.

Career Highlights

Jeanne H. Raymond has worked with prominent companies such as IBM and Globalfoundries Inc. Her experience in these organizations has significantly contributed to her expertise in the field of integrated circuit design and voltage optimization.

Collaborations

Throughout her career, Jeanne has collaborated with notable colleagues, including Jeanne P. Bickford and Susan K. Lichtensteiger. These collaborations have likely enriched her work and expanded her impact in the industry.

Conclusion

Jeanne H. Raymond's innovative work in voltage binning technologies has made her a significant figure in the field of integrated circuit design. Her patents reflect a deep understanding of optimizing timing and power risk, showcasing her contributions to advancing technology.