Jayson S Preece

Title: Jayson S Preece: Innovator in Semiconductor Technology

Introduction

Jayson S Preece is a notable inventor based in Riverton, UT (US). He has made significant contributions to the field of semiconductor technology, particularly in the design and functionality of power MOSFETs. His innovative approach has led to the development of a unique patent that enhances the efficiency and performance of semiconductor devices.

Latest Patents

Jayson holds a patent for "Multi-level options for power MOSFETS." This patent discusses a semiconductor device that includes first and second conductive layers. The first conductive layer features a gate runner and a drain contact, while the second conductive layer includes a drain conductor. Notably, at least a portion of the drain conductor overlaps with the gate runner. The design also incorporates a first surface of the semiconductor device that includes a gate pad coupled to the gate runner and a drain pad connected to both the drain contact and the drain conductor. This innovative design aims to improve the overall functionality and efficiency of power MOSFETs.

Career Highlights

Jayson is currently employed at Fairchild Semiconductor Corporation, where he continues to work on advancing semiconductor technologies. His expertise in the field has positioned him as a valuable asset to the company and the industry as a whole.

Collaborations

Jayson collaborates with Thomas E Grebs, a fellow innovator in the semiconductor sector. Their combined efforts contribute to the ongoing development of cutting-edge technologies in the industry.

Conclusion

Jayson S Preece is a distinguished inventor whose work in semiconductor technology has led to significant advancements in power MOSFET design. His patent reflects a commitment to innovation and efficiency in the field.