Epsoo, Finland

Jani Hämäläinen

USPTO Granted Patents = 4 

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 8(Granted Patents)


Location History:

  • Epsoo, FI (2018)
  • Espoo, FI (2016 - 2023)

Company Filing History:


Years Active: 2016-2025

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4 patents (USPTO):Explore Patents

Title: **Innovations of Jani Hämäläinen in Transition Metal Dichalcogenides**

Introduction

Jani Hämäläinen, located in Espoo, Finland, stands out as an innovative inventor in the realm of materials science. With a noteworthy portfolio that includes four patents, his contributions significantly advance the fields of atomic layer deposition and etching technologies for transition metal dichalcogenide (TMDC) thin films. His work focuses on the development of methods that enhance material properties for various industrial applications.

Latest Patents

Among his latest innovations, Hämäläinen's patents detail advanced vapor deposition methods for depositing TMDC films like rhenium sulfide thin films. This technology includes a unique deposition cycle where a substrate is alternately and sequentially exposed to a vapor phase transition metal precursor, a reducing agent, and a chalcogenide precursor. The innovative use of a vapor phase rhenium halide precursor alongside specific agents for reduction and sulfur precursor allows for precise control in the creation of high-quality TMDC films, which may be utilized as 2D materials. Additionally, these films can be etched through chemical vapor etching, employing an oxidant and an inert gas to efficiently remove excess material, further enhancing their applicability in nanotechnology.

Career Highlights

Jani Hämäläinen is currently affiliated with Asm IP Holding B.V., where he continues to push the boundaries of innovation in materials science. His focus on developing novel techniques for TMDC film production not only highlights his expertise but also contributes to the growing demand for advanced materials in various technological sectors.

Collaborations

Throughout his career, Hämäläinen has collaborated with notable researchers, including Mikko Ritala and Markku Leskelä. These partnerships emphasize the collective effort in advancing research and application of TMDC materials, showcasing the importance of teamwork in achieving significant breakthroughs within the industry.

Conclusion

Jani Hämäläinen's contributions through his patents and research efforts solidify his status as a prominent inventor in the field of transition metal dichalcogenides. His inventive approaches to vapor deposition and etching open up new possibilities for the use of TMDC films in numerous applications, underlining the importance of innovation in the ever-evolving landscape of materials science.

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