James L Dishman

Title: Innovations of James L. Dishman

Introduction

James L. Dishman is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of semiconductor technology. With a total of 2 patents, his work focuses on advanced methods of photochemical etching.

Latest Patents

Dishman's latest patents include innovative methods for selectively photochemically dry etching semiconductor materials. One patent describes a method that allows for the selective etching of a first semiconductor material in the presence of a second material, which is not etched during the process. This method involves subjecting both materials to the same photon flux and gaseous chemical etchant under specific conditions. Another patent outlines a composition/bandgap selective dry photochemical etching method, where the first semiconductor material is etched while the second material remains substantially unetched. These patents demonstrate his expertise in manipulating semiconductor properties for enhanced performance.

Career Highlights

James L. Dishman is associated with the United States of America as represented by the United States. His work has contributed to advancements in semiconductor processing techniques, which are crucial for the development of modern electronic devices.

Collaborations

Dishman has collaborated with Carol I. Ashby, further enhancing the innovative potential of their combined expertise in semiconductor technology.

Conclusion

James L. Dishman's contributions to semiconductor technology through his patents reflect his innovative spirit and dedication to advancing the field. His work continues to influence the development of efficient semiconductor processing methods.