James J Coleman

Title: The Innovations of James J. Coleman in Gallium Arsenide Technology

Introduction

James J. Coleman is an accomplished inventor located in Plainfield, NJ, known for his innovative work in the field of semiconductor technology. With a focus on improving device properties, he has made significant contributions during his tenure at Bell Telephone Laboratories.

Latest Patents

Coleman's most notable patent, titled "Fabrication of Gallium Arsenide MOS Devices," introduces a method for fabricating gallium arsenide MOS devices that boast improved stoichiometric and electrical properties. The invention features a gallium arsenide substrate that is overlaid with a native oxide and an aluminum oxide layer, fabricated through an advanced plasma oxidizing process. This innovation enhances the reliability and efficiency of gallium arsenide devices, which are crucial in various electronic applications.

Career Highlights

Coleman has dedicated his career to pioneering advancements in semiconductor technology while working at Bell Telephone Laboratories. His profound understanding of materials and processes has enabled him to push the boundaries of existing technology, resulting in impactful patents and contributions to the field.

Collaborations

Throughout his career, James J. Coleman has collaborated with esteemed colleagues such as Chuan C. Chang and Robert P. Chang. Together, they have explored new methodologies and applications in semiconductor fabrication, furthering the development of gallium arsenide devices.

Conclusion

James J. Coleman stands out as a significant figure in the realm of innovation, particularly in the fabrication of gallium arsenide MOS devices. His patent and collaborative efforts at Bell Telephone Laboratories underscore the importance of teamwork and ingenuity in advancing technology. As the field continues to evolve, Coleman's contributions will undoubtedly have a lasting impact on the industry.