Company Filing History:
Years Active: 1999
Title: Inventor Spotlight: James Heddleson and His High Voltage Gate Dielectric Method
Introduction:
In the world of integrated circuit devices, innovation plays a pivotal role in advancing technology. James Heddleson, an inventive mind based in Austin, Texas, has made significant contributions through his patent for a method of forming a high voltage gate dielectric. With his expertise and dedication, Heddleson has made his mark in the field of semiconductor technology. Let's explore more about his invention and his association with Motorola Corporation.
The Invention: Method for Forming a High Voltage Gate Dielectric
James Heddleson's patent details a method involving the formation of an integrated circuit device with a high voltage gate dielectric. The process begins by growing a tunnel oxide, which is then exposed to a nitrogen-containing ambient. This exposure allows for the incorporation of nitrogen at atomic locations at the interface between the tunnel oxide and a substrate.
The method further encompasses the formation of a floating gate electrode and interpoly dielectric regions. Subsequently, the tunnel oxide is selectively etched from the active areas, leaving behind nitrogen contamination.
To enhance the charge-to-breakdown characteristics by a significant factor of 1,000, a high voltage gate dielectric is then grown using sacrificial oxidation and a low-temperature wet oxidation process. Afterward, a lower voltage logic gate oxide is formed, completing the manufacturing process.
James Heddleson's Patents and Company Association:
James Heddleson has been granted one patent for his invention of the method for forming a high voltage gate dielectric. His work showcases his expertise and understanding of semiconductor technology.
Heddleson's association with Motorola Corporation has been instrumental in the development and application of his invention. Motorola Corporation, known for its global presence in communication and electronic devices, has provided an ideal platform for Heddleson to contribute to the advancement of integrated circuit technology.
Collaborators and Co-workers:
Throughout his career, James Heddleson has had the opportunity to collaborate with talented professionals who share his passion for innovation. Two noteworthy colleagues include Bikas Maiti and Wayne Paulson. Their combined expertise and dedication have likely played a significant role in refining Heddleson's high voltage gate dielectric method.
Conclusion:
James Heddleson's invention of a method for forming a high voltage gate dielectric demonstrates his expertise and creativity within the realm of integrated circuit technology. Through his association with Motorola Corporation and collaboration with fellow professionals like Bikas Maiti and Wayne Paulson, Heddleson has made valuable contributions to the field. As the industry continues to evolve, it is innovators like Heddleson who drive progress and push the boundaries of what is possible in the world of semiconductors.