Location History:
- Colts Neck, NJ (US) (1979 - 1983)
- East Windsor, NJ (US) (1985)
Company Filing History:
Years Active: 1979-1985
Title: The Innovative Contributions of James H McFee
Introduction
James H McFee is a notable inventor based in Colts Neck, NJ (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work has been instrumental in advancing methods used in molecular beam epitaxy and substrate heating arrangements.
Latest Patents
One of McFee's latest patents is a growth substrate heating arrangement for ultra-high vacuum silicon molecular beam epitaxy (MBE). This innovative heating arrangement includes a filament that generates thermal energy in response to a DC current. It features a metallic enclosure surrounding the filament, an intermediate semiconductor substrate, and a substrate support that maintains the substrates in a specific relationship. This design ensures that the temperature on the surface of the semiconductor growth substrate remains at or below a fixed temperature, approximately 1100°C for silicon, regardless of the DC current applied.
Another significant patent involves a molecular beam epitaxial method for fabricating semiconductor devices. In this method, dopants are implanted by establishing a plasma containing ions of the dopant, which are then directed to the growing substrate surface. The plasma formed in the ion gun contains ions of boron and arsenic, allowing for precise control over the dopants selected for implantation. This method enables rapid changes to the dopant type by simply readjusting the mass filter in the ion gun.
Career Highlights
Throughout his career, James H McFee has worked with prestigious organizations such as Bell Telephone Laboratories and AT&T Bell Laboratories. His experience in these companies has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Some of McFee's notable coworkers include Sean N Finegan and Robert G Swartz. Their collaborations have likely played a role in the development of his innovative patents and contributions to the field.
Conclusion
James H McFee's work in semiconductor technology showcases his innovative spirit and dedication to advancing the field. His patents reflect a deep understanding of the complexities involved in molecular beam epitaxy and substrate heating arrangements. His contributions continue to influence the industry and inspire future innovations.