James D Kupec

Title: James D. Kupec: Innovator in Nonvolatile Memory Technology

Introduction

James D. Kupec is a notable inventor based in Dallas, TX, recognized for his contributions to the field of memory technology. He holds a patent for a unique nonvolatile static random access memory (SRAM) cell, which has significant implications for data storage and retrieval.

Latest Patents

James D. Kupec's patent, titled "Directly-coupled and capacitively coupled nonvolatile static RAM cell," describes a nonvolatile SRAM cell designed to store data in a nonvolatile state while allowing for accurate data recall. The invention features cross-coupled transistors that maintain complementary logic states for volatile data storage. Additionally, it incorporates tunnel capacitors and switch transistors that work together to ensure the nonvolatile saving of volatile data. This innovative design addresses the challenges of data integrity and storage efficiency in memory technology.

Career Highlights

James D. Kupec has made significant strides in his career, particularly during his time at Mostek Corporation. His work has contributed to advancements in memory technology, showcasing his expertise and innovative thinking in the field. His patent reflects a deep understanding of electronic components and their interactions, which has positioned him as a key figure in the development of nonvolatile memory solutions.

Collaborations

James D. Kupec has collaborated with fellow inventor Daniel C. Guterman, working together to push the boundaries of memory technology. Their partnership has fostered innovation and has led to advancements that benefit the industry.

Conclusion

James D. Kupec's contributions to nonvolatile memory technology through his patent demonstrate his commitment to innovation and excellence in the field. His work continues to influence the development of memory solutions, ensuring data integrity and efficiency in modern technology.